现摘录内容如下：
Measurement method
a. VD=VDD, VS=VB=0V, VG=0V TO 0.8*VDD
measure VTSAT=VG at ID=0.1UA*W/L
b.DIBL=|VTSAT-VT_linear|/(VDD-0.05(0.1))*1000
接着我翻看了一下前面的VT_linear的测试，发现测试方法和（a）中讲述的VTSAT的测试方法一样。有一点除外，就是VT_linear测试中的VD＝0.05V(0.1V)，而VTSAT测试中的VD=VDD,没有表明VDD的具体数值。
因此，我猜测，这个DIBL测试的过程应该是改变VD值，通过a可以得到对应的VTSAT，然后通过b可以得到对应的DIBL值。然后得到DIBL对应于VD的一条曲线。
请各位帮我看看，看我的理解是不是正确的。谢谢了。
最新回复
Then you will know how to measure DIBL.
(2010-02-27 21:37:02, Size: 250 KB, Downloads: 20)
– VTLIN
VB=VS=0, VD=0.05, VG = 0 to 0.8*VDDN
Measure VG@ID = 0.1μA*(W/L)
– VTSAT
VB=VS=0, VD=1.1*VDDN, VG = 0 to 0.8*VDDN
Measure VG@ID = 0.1μA*(W/L)
DIBL= (Vtlin-Vtsat) / (1.1Vddn-0.05)
Threshold variation is caused by the increased current with increased drain voltage, as the applied drain voltage controls the inversion layer charge at the drain, thereby competing with the gate voltage. In the weak inversion regime, there is a potential barrier between the source and the channel region. The height of this barrier is a result of the balance between drift and diffusion current between these two regions. If a high drain voltage is applied, the barrier height can decrease, leading to an increase drain current. Thus the drain current is controlled not only by gate voltage, but also by the drain voltage
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QUOTE:
有点吹了吧。。。不是知道原理就会做的，就好象知道E=mC2，你给我造个原子弹。
具体如何表征就如LZ 所引用的